ISP12DP06NMXTSA1 - Infineon Technologies
MPNISP12DP06NMXTSA1
End of Life
MOSFET P-CH 60V 2.8A SOT223-4
$1.21Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
SeriesOptiMOS™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 2.8A (Ta) |
| Power dissipation | 1.8W (Ta), 4.2W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 4V @ 520µA |
| Rds on (Max) @ id, vgs | 125mOhm @ 2.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 20.2 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 790 pF @ 30 V |