ISC010N06NM5ATMA1 - Infineon Technologies
MPNISC010N06NM5ATMA1
End of Life
OPTIMOS5 60 V POWER MOSFET IN SU
$3.86Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 39A (Ta), 330A (Tc) |
| Power dissipation | 3W (Ta), 214W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.3V @ 147µA |
| Rds on (Max) @ id, vgs | 1.05mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 143 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 11000 pF @ 30 V |