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Infineon Technologies IRLZ44ZSTRLPBF — Discrete Semiconductors

IRLZ44ZSTRLPBF N-Channel MOSFET, 55V, 13.5mΩ, D2PAK

MPNIRLZ44ZSTRLPBF
Last Buy

Infineon HEXFET® IRLZ44ZSTRLPBF, N-Channel MOSFET, 55 V drain-source, 51 A continuous drain, 13.5 mΩ Rds(on) at 10 V, logic-level gate drive, D2PAK surface-mount package, -55°C to 175°C junction temperature.

$1.4700Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRLZ44ZSTRLPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C51A (Tc)
Power dissipation80W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs13.5mOhm @ 31A, 10V
Gate charge (Qg) (Max) @ vgs36 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1620 pF @ 25 V

Product details

The 36 nC gate charge at 5 V keeps switching losses manageable in a 50–200 kHz PWM application. The junction temperature range extends to 175°C, which gives headroom in high-ambient environments like engine bays or industrial enclosures, though the 80 W power dissipation ceiling at case temperature means the PCB copper pour and any heatsink must be sized for the actual load current and switching frequency.

If your design depends on the IRLZ44ZSTRLPBF, secure the last available stock through independent distribution now and begin qualifying a replacement for future production runs. The base product number IRLZ44 covers multiple package and tape variants; the Z suffix indicates the logic-level threshold variant, and the STRLPBF suffix specifies the D2PAK on tape-and-reel.

D2PAK footprint and thermal design

The TO-263 (D2PAK) package has two leads plus the tab, which is the drain connection. The ±16 V maximum gate-source voltage gives margin for overshoot, but the 3 V threshold at 250 µA means the device is fully off below 2.5 V typical — a pull-down resistor on the gate is good practice to prevent float-on during power-up.

Frequently asked questions

Is the IRLZ44ZSTRLPBF obsolete or last time buy?

Yes, the IRLZ44ZSTRLPBF is on Last Buy status. Infineon has announced a final purchase period, after which the part will no longer be manufactured. Buyers should secure remaining stock through independent distribution and plan a replacement for new builds.

What is the Vgs threshold of IRLZ44ZSTRLPBF?

The maximum gate-source threshold voltage is 3 V at 250 µA drain current. This logic-level threshold allows the MOSFET to be fully enhanced by a 5 V logic rail, though the on-resistance is specified at both 4.5 V and 10 V drive.