What this HEXFET N-channel MOSFET offers
Total gate charge is 36 nC at 5 V, and input capacitance measures 1620 pF at 25 V drain-source.
The IRLZ44ZLPBF is listed as obsolete.
At 31 A drain current, that resistance drops about 420 mV and dissipates roughly 13 W — well within the 80 W package limit at the case, but the junction-to-case thermal path needs a good heatsink or thermal pad to keep the die below 175°C. The 51 A continuous rating is at 25°C case temperature; derate for higher ambient or limited heatsinking. The logic-level gate threshold (3 V max at 250 µA) means a 5 V microcontroller output can drive it directly, though the 4.5 V minimum drive voltage for rated Rds(on) suggests using a 10 V gate supply for full saturation.
Through-hole TO-262 package — hand-solderable and board-mount considerations
The through-hole mounting means it can be hand-soldered or wave-soldered, which is handy for prototyping or low-volume production. Plan for adequate copper area or an external heatsink to handle the 80 W power dissipation at the case.