IRLZ44NSPBF — logic-level N-channel MOSFET in D2PAK
The D2PAK (TO-263) surface-mount package suits automated assembly and carries the thermal tab for heatsinking through the PCB.
Where a 55 V, 47 A logic-level FET fits
The 55 V Vdss gives comfortable margin on 12 V, 24 V, and 48 V nominal rails — common in industrial motor drives, DC-DC converters, battery management systems, and automotive auxiliary loads. The 47 A continuous rating at case temperature 25 °C supports high-current switching, but the designer must derate per the thermal curve: at 100 °C case temperature the current capability drops significantly.
The 48 nC typical gate charge at 5 V and 1700 pF input capacitance at 25 V drain-source are moderate figures — a 5 V gate driver with a few ohms of series resistance can switch this FET in the tens of kilohertz range without excessive cross-conduction loss. The ±16 V maximum gate-source voltage gives margin for gate-drive overshoot, but the logic-level threshold (2 V max at 250 µA,) means the gate must be held below 2 V to ensure a clean off-state, especially in noisy environments. The 22 mOhm Rds(on) at 10 V gate drive is the headline figure; at 4.5 V drive the resistance roughly doubles, so designs running from a 3.3 V gate signal should verify the actual on-resistance against the application current.
The D2PAK footprint is widely second-sourced across the TO-263 ecosystem, so a cross-reference for dual-sourcing is straightforward if volume warrants qualification of an alternate.