IRLZ44NL, Infineon HEXFET® N-Channel MOSFET, 55V Vdss, 47A Id, 22mOhm Rds(on) @ 10V, logic-level gate drive, TO-262-3 (I²Pak) package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 47A (Tc) |
| Power dissipation | 3.8W (Ta), 110W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 22mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 48 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 1700 pF @ 25 V |
The device is packaged in a through-hole TO-262 (I²Pak) with long leads, intended for PCB mounting with the tab soldered for heat sinking.
New-design win activity should not target this order code. The buyer should qualify the substitute against the original design's thermal and switching requirements.
A functionally equivalent replacement within the Infineon HEXFET logic-level N-channel family should be selected by matching or exceeding the 55 V drain-source voltage, 47 A continuous drain current, and through-hole TO-262 package, while verifying gate-threshold voltage compatibility with the existing driver.