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Infineon Technologies IRLZ34NS — Discrete Semiconductors

IRLZ34NS HEXFET N-Channel MOSFET, 55V 30A D2PAK, Obsolete

MPNIRLZ34NS
Obsolete

IRLZ34NS, Infineon HEXFET N-channel MOSFET, 55V Vdss, 30A Id, 35mOhm Rds(on) at 10V, D2PAK (TO-263) surface mount, -55°C to 175°C.

$1.6300Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRLZ34NS specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation3.8W (Ta), 68W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs35mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds880 pF @ 25 V

Product details

The 55 V Vdss rating gives 20% derating margin on a 48 V nominal bus, which is the usual practice for telecom rectifiers and e-bike battery circuits. The 30 A continuous current at case temperature 25°C derates with case heating — at 100°C case you typically lose about 40% of that figure, so size the thermal path accordingly. Gate drive flexibility is a design convenience: the IRLZ34NS specifies both 4 V and 10 V drive voltages for achieving the stated Rds(on). With a 25 nC typical gate charge at 5 V, a microcontroller GPIO driving through a small gate resistor can switch it fast enough for 20-50 kHz PWM without a dedicated gate driver IC.

Infineon has ended production of this exact order code. New stock is no longer flowing through the factory, so any units available today are from distributor inventory or surplus channels. The IRFZ34NS or similar active-series parts offer a pin-compatible footprint with updated silicon.

Frequently asked questions

Is IRLZ34NS obsolete?

Yes, the IRLZ34NS carries an Obsolete product status. Infineon has discontinued this exact order code. Procurement is through surplus and broker channels.

What is a suitable replacement for IRLZ34NS?

A pin-compatible replacement should match the D2PAK (TO-263) footprint, 55 V Vdss minimum, 30 A Id capability, and logic-level gate drive. Infineon's current 55 V N-channel HEXFET portfolio in D2PAK is the first place to look.

What is the difference between IRLZ34N and IRLZ34NS?

The IRLZ34N is the through-hole TO-220AB version of the same die; the IRLZ34NS is the surface-mount D2PAK (TO-263) variant. Electrical ratings (55 V, 30 A, 35 mΩ) are identical. The 'S' suffix indicates the surface-mount package.