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Infineon Technologies IRFZ44VZL — Discrete Semiconductors

IRFZ44VZL HEXFET N-Channel MOSFET, 60V 57A TO-262

MPNIRFZ44VZL
Obsolete

IRFZ44VZL, HEXFET N-Channel MOSFET, 60V Vdss, 57A Id, 12mOhm Rds(on) at 34A, 65nC Qg, TO-262 through-hole package, -55 to 175°C junction temperature.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFZ44VZL specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C57A (Tc)
Power dissipation92W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs12mOhm @ 34A, 10V
Gate charge (Qg) (Max) @ vgs65 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1690 pF @ 25 V

Product details

60 V N-channel power switch in TO-262

Total gate charge of 65 nC at 10 V means a moderate gate-drive current — about 6.5 mA at 100 kHz switching frequency — so a standard driver IC handles it without excessive dissipation.

Thermal and drive margins for the TO-262 build

Maximum power dissipation is 92 W at the case temperature — the TO-262 package's large copper tab couples heat into the heatsink or PCB plane, but the 175 °C junction limit means the thermal resistance from junction to case must be kept below about 1.6 °C/W for full current. Input capacitance is 1690 pF at 25 V drain-source, which together with the 65 nC gate charge defines the switching loss profile — the driver must source and sink enough peak current to charge and discharge this capacitance within the dead-time budget.

Frequently asked questions

What is the replacement for IRFZ44VZL?

A replacement must be selected by comparing the original design's drain-source voltage (60 V), continuous drain current (57 A), on-resistance (12 mOhm at 34 A), gate charge (65 nC), and package (TO-262) against available active parts.