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Infineon Technologies IRFZ44VS — Discrete Semiconductors

IRFZ44VS HEXFET N-Channel MOSFET, 60V 55A D2PAK, Obsolete

MPNIRFZ44VS
Obsolete

Infineon IRFZ44VS, HEXFET® series, N-Channel MOSFET, 60V Vdss, 55A Id, 16.5mOhm Rds(on) @ 10V, D2PAK (TO-263), -55°C to 175°C.

Infineon Technologies IRFZ44VS datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFZ44VS specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C55A (Tc)
Power dissipation115W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs16.5mOhm @ 31A, 10V
Gate charge (Qg) (Max) @ vgs67 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1812 pF @ 25 V

Product details

The IRFZ44VS is listed as Obsolete. Infineon no longer manufactures this specific HEXFET N-channel MOSFET. Sourcing is possible, but each lot needs careful date-code and counterfeit screening before it goes onto a board.

60 V, 55 A, 16.5 mΩ — the numbers that matter for a replacement

That combination — 60 V blocking, 55 A carrying, sub-20 mOhm Rds(on) — puts it in the medium-voltage, high-current switching sweet spot: DC-DC converters, motor drives, battery management, and power supply output stages. The gate charge is 67 nC at 10 V, so the driver needs to source about 67 nC per switching cycle; a typical gate-drive IC or a totem-pole pair handles that without trouble.

D2PAK footprint — the mechanical constraint

The IRFZ44VS comes in the D2PAK (TO-263-3) surface-mount package. That is a three-lead tabbed package with a large exposed drain pad on the bottom.

Frequently asked questions

What is the replacement for IRFZ44VS?

There is no official Infineon successor listed for the IRFZ44VS. For a pin-compatible replacement in the D2PAK footprint, look for an N-channel MOSFET with a 60 V Vdss rating, continuous drain current of at least 55 A, and Rds(on) at or below 16.5 mOhm at 10 V gate drive. Parts from the same HEXFET family or from competitors like STMicroelectronics or ON Semiconductor in the D2PAK package are candidates, but each must be verified against the specific switching and thermal requirements of your design.