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Infineon Technologies IRFZ44ESTRR — Discrete Semiconductors

IRFZ44ESTRR N-Channel MOSFET, 60V, 48A, D2PAK, Obsolete

MPNIRFZ44ESTRR
Obsolete

Infineon IRFZ44ESTRR HEXFET N-Channel MOSFET, 60V Vdss, 48A continuous drain, 23mOhm Rds(on) at 10V, TO-263-3 / D2PAK surface-mount package.

Infineon Technologies IRFZ44ESTRR datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFZ44ESTRR specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C48A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs23mOhm @ 29A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1360 pF @ 25 V

Product details

Gate charge of 60 nC at 10 V and input capacitance of 1360 pF at 25 V define the switching speed and gate-driver power budget — a 10 V drive voltage is required to achieve the rated Rds(on).

Infineon lists the IRFZ44ESTRR as Obsolete. For BOM lines still specifying this part, procurement must rely on independent-distribution surplus stock or last-time-buy inventory. If a pin-compatible second source is needed, the closest functional match within the same 60 V / 48 A / D2PAK class would be a current-production N-channel MOSFET with similar Rds(on) and gate charge; cross-reference databases should be consulted for exact footprint compatibility.

Frequently asked questions

Is IRFZ44ESTRR obsolete?

Yes, Infineon has marked the IRFZ44ESTRR as Obsolete. There is no official successor listed, so it is only available through surplus or last-time-buy channels.

What is the Vgs threshold of IRFZ44ESTRR?

The maximum gate threshold voltage is 4 V at a drain current of 250 µA. This means a 5 V logic-level gate drive may not fully enhance the device — a 10 V drive is specified to achieve the rated 23 mOhm on-resistance.