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Infineon Technologies IRFZ44EL — Discrete Semiconductors

IRFZ44EL HEXFET N-Channel MOSFET, 60V 48A TO-262

MPNIRFZ44EL
Obsolete

IRFZ44EL, HEXFET® Series, N-Channel MOSFET, 60 V Vdss, 48 A Continuous Drain (Tc), 23 mOhm Rds On @ 29A, 10V, Through Hole, TO-262-3, -55°C ~ 175°C.

Infineon Technologies IRFZ44EL datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFZ44EL specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C48A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs23mOhm @ 29A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1360 pF @ 25 V

Product details

60 V, 48 A N-channel HEXFET in a TO-262 package

The device comes in a through-hole TO-262 package (I²Pak with long leads), suitable for designs where a heat sink attaches to the tab and the leads solder into a PCB or wire harness.

The gate charge is 60 nC at 10 V, so a gate driver capable of sourcing and sinking that charge quickly is needed to minimise switching losses at higher frequencies.

Thermal and environmental range

Maximum power dissipation is 110 W at case temperature, which requires a proper heatsink and thermal interface to keep the junction within limits at high continuous current.

Frequently asked questions

Where can I buy IRFZ44EL and what is the price?

The IRFZ44EL is obsolete and no longer in factory production.

Is IRFZ44EL obsolete? What is a direct replacement?

Yes, the IRFZ44EL is listed as obsolete by the manufacturer. A direct pin-compatible replacement within the same TO-262 footprint is not officially listed in the available records. For a drop-in substitute, verify the pinout and key ratings (60 V, 48 A, 23 mΩ Rds(on) at 10 V) against a current-production N-channel MOSFET in a TO-262 or TO-220 package — many modern parts offer similar or better specs. Cross-reference options can be discussed at quote time.