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Infineon Technologies IRFZ34NSTRR — Discrete Semiconductors

IRFZ34NSTRR N-Channel MOSFET, 55V 29A HEXFET, D2PAK

MPNIRFZ34NSTRR
Obsolete

Infineon HEXFET® IRFZ34NSTRR N-Channel MOSFET, 55V Vdss, 29A Id, 40mOhm Rds(on) @ 10V, D2PAK (TO-263) surface mount, -55°C to 175°C.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFZ34NSTRR specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C29A (Tc)
Power dissipation3.8W (Ta), 68W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds700 pF @ 25 V

Product details

The IRFZ34NSTRR: The D2PAK (TO-263) surface-mount package with exposed tab is sized for power-dissipation applications up to 68 W when the tab is soldered to a copper plane.

Rds(on) and gate drive — what the 10 V spec means for your design

Package and thermal management in the D2PAK

The TO-263-3 (D2PAK) package is a surface-mount power package with a large exposed metal tab on the bottom. The 3.8 W rating at ambient (still air) is a no-heatsink reference — real designs must use the tab as the primary thermal path. The D2PAK footprint is the same as the through-hole TO-220 in terms of die size, making this a direct surface-mount alternative for designs that originally used a TO-220 part.

Obsolete — sourcing reality for IRFZ34NSTRR

Sourcing this part now relies on the surplus and broker market — factory overruns, end-of-life buy leftovers, and inventory from independent distributors. When evaluating surplus lots, check the date-code spread and packaging condition — sealed factory reels with consistent date-codes from a single production run are the preferred sourcing grade.

Second-source and replacement considerations

The through-hole sibling IRFZ34N (TO-220 package) shares the same die and electrical ratings but differs in mounting. For a surface-mount replacement, the closest functional match would be a current-production N-channel MOSFET in D2PAK with similar voltage, current, and on-resistance ratings from Infineon's current HEXFET portfolio or from competitors such as Vishay, ON Semiconductor, or STMicroelectronics. A parametric search for 55-60 V, 25-30 A, <50 mOhm Rds(on) in D2PAK is the practical cross-reference approach.

Frequently asked questions

Can I use IRFZ34N instead of IRFZ34NSTRR?

The IRFZ34N (TO-220 through-hole) uses the same die and has identical electrical ratings (55 V, 29 A, 40 mOhm) as the IRFZ34NSTRR. It is a functional replacement if the board layout can accommodate a through-hole package instead of the surface-mount D2PAK. The IRFZ34N is also obsolete.