Device overview and key ratings
The IRFZ34NLPBF is an N-channel enhancement-mode MOSFET from Infineon's HEXFET® series, housed in a TO-262-3 (I²Pak) through-hole package.
Switching and drive characteristics
Gate charge is 34 nC at 10 V, which sets the energy per switching cycle and influences gate-driver selection. Input capacitance measures 700 pF at 25 V drain-source, a figure that affects switching losses and drive current requirements. These parameters are directly relevant when sizing the gate-drive circuit and estimating switching losses in a converter or motor-drive application.
Thermal and power dissipation
Maximum power dissipation is 3.8 W at ambient temperature (Ta) and 68 W at case temperature (Tc). The TO-262 package with long leads (I²Pak) is designed for through-hole mounting on a PCB or heatsink.
The IRFZ34NLPBF is officially classified as Obsolete by the manufacturer. Sourcing is limited to surplus inventory and independent distribution channels.
