HEXFET N-channel power switch for 55 V rails
The IRFU4105ZPBF-IR is an N-channel power MOSFET from Infineon's HEXFET® series, rated for 55 V drain-source and 30 A continuous drain current. The 24.5 mOhm maximum on-resistance at 18 A and 10 V gate drive keeps conduction losses low in moderate-current switching applications. Housed in a through-hole IPAK package, it suits designs where hand-soldering or board-level rework is expected — the three-lead footprint is straightforward to populate and inspect without X-ray.
Gate drive and switching parametrics
The gate threshold voltage is specified at 4 V maximum with 250 µA drain current, and the absolute maximum gate-source rating is ±20 V — a 10 V gate drive comfortably saturates the channel while staying inside the oxide stress limit. Input capacitance is 700 pF, giving the designer a handle on the Miller plateau duration during hard-switching transitions. Power dissipation is rated at 48 W — the thermal path through the IPAK tab to the PCB copper area governs the real-world limit.