Infineon IRFIZ24NPBF HEXFET N-channel MOSFET, 55V drain-source voltage, 14A continuous drain current, 70mOhm on-resistance at 10V gate drive, TO-220 Full-Pack through-hole package, -55°C to 175°C operating temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 14A (Tc) |
| Power dissipation | 29W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 70mOhm @ 7.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 20 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 370 pF @ 25 V |
The device carries a maximum on-resistance of 70 mOhm when driven with 10 V on the gate, and it handles junction temperatures from -55°C up to 175°C, covering most industrial and automotive under-hood environments.
The part is ROHS3 compliant.
Maximum on-resistance is 70 mOhm at a gate drive of 10 V with 7.8 A drain current.
Within the same HEXFET family, pin-compatible options with similar ratings include parts like the IRFZ24NPBF (same die in a standard TO-220, non-isolated tab) — but verify the package isolation requirement. The Full-Pack variant is unique for applications needing a fully isolated mounting surface.