The IRFH7921TRPBF-IR is an N-Channel power MOSFET from Infineon's HEXFET® series, rated for 30 V drain-source and 15 A continuous switching current. Gate charge is 14 nC at 4.5 V, meaning the gate driver needs only about 1.4 mA average current to switch at 100 kHz — a low drive burden that suits microcontroller GPIO or a small gate-driver IC without a separate boost stage.
Temperature grade and switching capability
The 2.35 V typical threshold at 25 µA drain current means the MOSFET starts conducting well before the gate reaches 4.5 V, but the full 8.5 mOhm Rds(on) requires the 10 V drive level specified in the test condition. Maximum gate-source voltage is ±20 V, so a 12 V or 15 V gate drive rail is safe; a 24 V gate drive would exceed the abs-max and damage the oxide. The 0.0012 µF (1.2 nF) input capacitance is consistent with the 14 nC gate charge — a 10-ohm gate resistor yields a ~12 ns rise time, fast enough for a 500 kHz switching regulator without excessive ringing.
The part is surface-mount in bulk packaging, so it feeds into standard reflow assembly lines without a moisture-sensitive handling exception (the bulk tube or tray format means no reel, but the reflow profile is the same as any Pb-free MOSFET). No pin-compatible second-source or successor is recorded — the HEXFET family is Infineon's own, and the parametric fit (30 V, 15 A, 8.5 mOhm, surface mount) is the selection anchor.