30 V N-Channel HEXFET — Rds(on) and gate charge profile
The IRFH7914TRPBF is a 30 V N-Channel MOSFET from Infineon's HEXFET family, rated for 15 A switching current with a maximum Rds(on) of 8.7 mOhm at 14 A and 10 V gate drive. Gate charge is 12 nC max at 4.5 V — this keeps the switching losses low in a 100–300 kHz DC-DC converter, where the driver's sourcing current and the Qg figure set the transition time. The ±20 V gate-source rating gives margin for ringing on the gate node in a hard-switched topology; a 10 V drive signal with 5 V of overshoot still stays inside the abs-max window.
Thermal and package — what the junction temperature means for the board
Maximum power dissipation is 3.1 W — this is the thermal budget at the board level.