The IRFH4210DTRPBF is an N-Channel HEXFET power MOSFET from Infineon. Its on-resistance is specified at 1.1 mOhm maximum when driven with 10 V on the gate at a 50 A drain current — that is the conduction loss floor for a high-current rail, so at 44 A switching current the I²R loss stays under 2.2 W, well within the 3.5 W power dissipation rating.
Gate charge and drive budget
Total gate charge is 77 nC at Vgs = 10 V. For a 100 kHz switching frequency the average gate drive current needed is 7.7 mA — the driver must source that plus the peak current to charge the input capacitance within the desired dead time. The gate threshold voltage is 2.1 V maximum at 100 µA drain current, so a 5 V logic-level gate drive turns the FET fully on, but the 1.1 mOhm Rds(on) spec is guaranteed only at 10 V.
Temperature range and where it fits
The 25 V drain-source rating gives headroom for 12 V and 24 V rails with margin for transients.