What the 5.2 mOhm Rds(on) means at 16 A
The IRF6810STRPBF is an N-channel HEXFET power MOSFET rated for 25 V drain-source and 16 A continuous drain current. The on-resistance is specified at 5.2 mOhm maximum when driven with 10 V on the gate at 16 A — that conduction loss is about 1.33 W at full current, sitting under the 2.1 W power dissipation limit. The gate charge is 11 nC at 4.5 V, so a 5 V logic-level gate driver will switch it cleanly without needing a 10 V rail.
Gate drive and switching considerations
The maximum gate-source voltage is ±16 V — typical 12 V gate drives are safe, but a 15 V rail leaves only 1 V of headroom before the oxide sees stress. The threshold voltage is 2.1 V maximum at 25 µA drain current, so a 3.3 V logic output will not fully enhance the FET; use a gate driver that swings to at least 4.5 V to hit the rated Rds(on).
For BOM risk management, the active status means it can be designed into new production, but a qualified alternative should be identified if dual-sourcing is required.