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Infineon Technologies IRF441 — Discrete Semiconductors

IRF441 N-Channel MOSFET, 450V 8A 125W, TO-220

MPNIRF441
Active

Infineon Technologies IRF441, N-Channel MOSFET, 450V drain-source voltage, 8A continuous drain current, 125W power dissipation, TO-220 through-hole package, bulk.

$1.44Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRF441 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Power125.0
Package_typeBulk
StatusActive
Supply voltage450.0
Switching current8.0

Product details

Device identity and key ratings

The IRF441 is an N-Channel power MOSFET rated for 450V drain-source voltage and 8A continuous drain current, with a maximum power dissipation of 125W. It comes in a TO-220 through-hole package.

The 450V Vds rating puts this part in the high-voltage class — it handles off-line rectified DC bus voltages (up to 400V nominal) with margin for transients. The 8A continuous drain current is the DC limit at 25°C case temperature; derate for higher ambient or poor heatsinking. The 125W power dissipation assumes the case is held at 25°C — in a real enclosure with a modest heatsink, the usable dissipation is lower, so the thermal path from junction to ambient governs the safe operating area. No special reflow profile needed — hand-solder or wave-solder friendly.

Frequently asked questions

What is the IRF441's maximum power dissipation?

The IRF441 is rated for 125W maximum power dissipation, measured at 25°C case temperature. Actual usable dissipation depends on the heatsink and ambient temperature in your application.