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Infineon Technologies IR21844STRPBF — Power Management (PMIC / Gate Driver)

IR21844STRPBF Half-Bridge Gate Driver – Infineon, 600V

MPNIR21844STRPBF
Active

Infineon IR21844STRPBF half-bridge gate driver, IGBT / N-Channel MOSFET, non-inverting, synchronous, 1.9 A peak drive, 40 ns / 20 ns rise/fall, 10 V supply, 14-SOIC, -40 to 150 °C.

$3.9800Ref. price · indicative, final on quote
Infineon Technologies IR21844STRPBF datasheet (PDF)
Packaging14-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IR21844STRPBF specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeSynchronous
MountingSurface Mount
Voltage10V ~ 20V
Logic voltage - VIL, VIH0.8V, 2.7V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)1.9A, 2.3A
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Case14-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)40ns, 20ns

Product details

Half-bridge gate driver with 600 V bootstrap and 1.9 A peak drive

The IR21844STRPBF is a half-bridge gate driver from Infineon that drives IGBTs and N-Channel MOSFETs in synchronous half-bridge configurations. It delivers 1.9 A peak source and 2.3 A peak sink current to charge and discharge the gate capacitance quickly, keeping switching losses low in motor-drive and inverter stages. The bootstrap supply supports a high-side voltage up to 600 V, which sets the maximum DC-link voltage the driver can handle — a hard ceiling for the power stage design. Rise and fall times are 40 ns and 20 ns typical.

Supply range, logic thresholds, and temperature grade

The supply voltage range is 10 V to 20 V. Logic inputs accept 0.8 V low and 2.7 V high thresholds. The 14-SOIC package is a common footprint. Compared to the IR21064STRPBF, which drives high-side or low-side independently with 0.2 A peak and 150 ns / 50 ns edges, the IR21844STRPBF offers 1.9 A peak and 40 ns rise time.

Frequently asked questions

Is IR21844STRPBF suitable for driving IGBTs?

Yes, the gate type is specified for IGBT and N-Channel MOSFET. The 1.9 A / 2.3 A peak drive and 40 ns / 20 ns edges are well matched to small- to medium-power IGBT modules in half-bridge topologies.

What are the alternatives to IR21844STRPBF?

The IR21064STRPBF is a lower-current independent high/low-side driver (0.2 A peak, 150 ns / 50 ns edges). The IRS2005STRPBF is a half-bridge driver with 0.29 A peak and 70 ns / 30 ns edges. For higher integration, the 2EDL23N06PJXUMA1 from the EiceDriver™ series offers 1.8 A peak with 48 ns / 37 ns edges and supports N- and P-Channel MOSFETs.