Infineon (International Rectifier) IR2181SPBF half-bridge gate driver, 2 independent non-inverting channels, 1.9A source / 2.3A sink peak output, 600V bootstrap, 40ns/20ns rise/fall, 10V-20V supply, -40°C to 150°C junction, 8-SOIC package.
| Parameter | Value |
|---|---|
| Gate type | IGBT, N-Channel MOSFET |
| Input type | Non-Inverting |
| Channel type | Independent |
| Mounting | Surface Mount |
| Voltage | 10V ~ 20V |
| Logic voltage - VIL, VIH | 0.8V, 2.7V |
| High side voltage - max (Bootstrap) | 600 V |
| Current - peak output (Source, sink) | 1.9A, 2.3A |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tube |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Number of drivers | 2 |
| Driven configuration | Half-Bridge |
| Rise (Fall time) | 40ns, 20ns |
The IR2181SPBF is a half-bridge gate driver with two independent, non-inverting channels. It drives IGBTs and N-Channel MOSFETs, with a 600 V bootstrap rating and 1.9 A source, 2.3 A sink peak output.
The -40°C to 150°C junction temperature range gives margin for motor-drive environments.
Yes, the IR2181SPBF is configured as a half-bridge driver with two independent, non-inverting channels. It drives both the high-side and low-side switches, with the high-side channel powered by a bootstrap supply rated to 600 V.
Yes, the gate type is specified for both IGBT and N-Channel MOSFET. The 1.9 A source and 2.3 A sink peak output is sufficient to drive medium-power devices in both families.