The IR2104STRPBF is a half-bridge gate driver from Infineon, designed to drive IGBTs and N-Channel MOSFETs in synchronous or high-side/low-side configurations. Its bootstrap supply handles up to 600 V on the high side, which sets the bus-voltage ceiling for motor drives, UPS inverters, and DC-DC converters. This drive strength is suited for switching medium-power IGBTs and MOSFETs at moderate frequencies — expect clean gate transitions without excessive ringing when the layout keeps the gate loop tight. The input is non-inverting with logic thresholds at 0.8 V (VIL) and 3 V (VIH), making it directly compatible with 3.3 V and 5 V controllers. Supply range is 10 V to 20 V, so a single 12 V or 15 V rail powers both the logic and the gate drive.
Thermal and package – design-in checklist
Rated for junction temperatures from -40 °C to 150 °C, the IR2104STRPBF can live in the same enclosure as the power stage without a separate cool zone. The 8-SOIC package (3.90 mm width) is a standard footprint — the copper pour under the part on the PCB acts as the primary heat path. ROHS3 compliant, no exemption issues for EU shipments.
Active production – sourcing posture
Infineon continues to manufacture this part in the 8-SOIC package. Sourced per RFQ — confirm lead time and quantity against your BOM line at quote time.