Half-bridge gate driver with 600 V bootstrap ceiling
The IR2103STRPBF is a half-bridge gate driver from Infineon designed to drive IGBTs and N-Channel MOSFETs in a high-side/low-side configuration. Its bootstrap supply handles up to 600 V on the high side. Supply voltage range is 10 V to 20 V. The driver accepts both inverting and non-inverting input signals on independent channels.
210 mA source / 360 mA sink peak output
Peak output current is 210 mA source and 360 mA sink. The asymmetric sink strength pulls the gate down faster than it charges, which helps reduce the dead-time window needed to prevent shoot-through. Logic input thresholds are 0.8 V for VIL and 3 V for VIH.
Infineon lists it as ROHS3 compliant. Supplied in Tape & Reel (TR) or Cut Tape (CT) format, 8-SOIC package (0.154-inch body width, 3.90 mm). The 8-SOIC footprint is common and routes easily on two-layer boards for low-side drive; a four-layer board is recommended when the high-side bootstrap node switches at high frequency to keep the loop inductance low.