Half-bridge driver with 600 V bootstrap headroom
The IR2101STRPBF drives the high- and low-side gates of an N-channel MOSFET or IGBT half-bridge, with the high-side floating supply rated to 600 V. That 600 V bootstrap rating is the ceiling for the DC bus voltage in motor drives, UPS inverters, and switch-mode power supplies — stay below it and the high-side driver keeps the bootstrap capacitor charged without level-shift stress.
210/360 mA peak drive and 100/50 ns edges
Peak output current is 210 mA source, 360 mA sink. The asymmetric sink strength pulls the gate down faster than it charges, which helps clamp the Miller plateau during turn-off. If your FET has a bigger gate, the edge slows; plan the gate resistor accordingly.
Supply voltage spans 10 V to 20 V, covering the common 12 V and 15 V bias rails used in industrial control. Logic input thresholds are 0.8 V low, 3 V high — the 3 V VIH means a 3.3 V controller output drives it directly, no level translator needed. That saves a resistor divider or a buffer on the PCB.
Active production, 8-SOIC package
Sourced per RFQ; no stock-holding claim.