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Infineon Technologies IQE013N04LM6CGATMA1

Infineon Technologies IQE013N04LM6CGATMA1

MPNIQE013N04LM6CGATMA1
End of Life

40V N-CH FET SOURCE-DOWN CG 3X3

$3.66960Price · pay online now
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$3.67 / ea

5 in stock — maximum per order · 3–4 days lead time

Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

IQE013N04LM6CGATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount, Wettable Flank
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C31A (Ta), 205A (Tc)
Power dissipation2.5W (Ta), 107W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 51µA
Rds on (Max) @ id, vgs1.35mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3900 pF @ 20 V