IPW65R190E6 - Infineon Technologies
MPNIPW65R190E6
End of Life
N-CHANNEL POWER MOSFET
$1.74Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesCoolMOS™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20.2A (Tc) |
| Power dissipation | 151W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 3.5V @ 730µA |
| Rds on (Max) @ id, vgs | 190mOhm @ 7.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 73 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1620 pF @ 100 V |