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Infineon Technologies IPP024N06N3G

IPP024N06N3G - Infineon Technologies

MPNIPP024N06N3G
End of Life

POWER FIELD-EFFECT TRANSISTOR, 1

$1.38Ref. price · indicative, final on quote
PackagingTO-220-3
SeriesOptiMOS™ 3
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPP024N06N3G specifications
ParameterValue
SeriesOptiMOS™ 3
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 196µA
Rds on (Max) @ id, vgs2.4mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs275 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds23000 pF @ 30 V