IPI65R660CFD - Infineon Technologies
MPNIPI65R660CFD
End of Life
N-CHANNEL POWER MOSFET
$0.65Ref. price · indicative, final on quote
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
RoHSROHS3 Compliant
SeriesCoolMOS™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 62.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 4.5V @ 200µA |
| Rds on (Max) @ id, vgs | 660mOhm @ 2.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 22 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 615 pF @ 100 V |