IPG20N06S4L26ATMA1 - Infineon Technologies
MPNIPG20N06S4L26ATMA1
End of Life
MOSFET 2N-CH 60V 20A 8TDSON
$1.05Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| Mounting | Surface Mount |
| Drain to source voltage | 60V |
| Current - continuous drain (Id) @ 25°C | 20A |
| Power - max | 33W |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 2.2V @ 10µA |
| Rds on (Max) @ id, vgs | 26mOhm @ 17A, 10V |
| Gate charge (Qg) (Max) @ vgs | 20nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 1430pF @ 25V |