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IPD028N06NF2SATMA1

Infineon Technologies IPD028N06NF2SATMA1

MPNIPD028N06NF2SATMA1
End of Life

TRENCH 40<-<100V

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24 in stock — maximum per order · 3–4 days lead time

$1.68 / ea from 10 pcs

PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesStrongIRFET™2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

IPD028N06NF2SATMA1 specifications
ParameterValue
SeriesStrongIRFET™2
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C24A (Ta), 139A (Tc)
Power dissipation3W (Ta), 150W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.3V @ 80µA
Rds on (Max) @ id, vgs2.85mOhm @ 70A, 10V
Gate charge (Qg) (Max) @ vgs102 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4600 pF @ 30 V