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Infineon Technologies IPB016N08NF2SATMA1

Infineon Technologies IPB016N08NF2SATMA1

MPNIPB016N08NF2SATMA1
End of Life

TRENCH 40<-<100V PG-TO263-3

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PackagingPG-TO263-3
RoHSROHS3 Compliant
SeriesStrongIRFET™ 2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

IPB016N08NF2SATMA1 specifications
ParameterValue
SeriesStrongIRFET™ 2
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C170A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ id3.8V @ 267µA
Rds on (Max) @ id, vgs1.65mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs255 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds12000 pF @ 40 V