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Infineon Technologies IPB013N06NF2SATMA1

Infineon Technologies IPB013N06NF2SATMA1

MPNIPB013N06NF2SATMA1
End of Life

TRENCH 40<-<100V

$4.10088Price · pay online now
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$4.10 / ea

1 in stock — maximum per order · 3–4 days lead time

PackagingPG-TO263-3
RoHSROHS3 Compliant
SeriesStrongIRFET™2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

IPB013N06NF2SATMA1 specifications
ParameterValue
SeriesStrongIRFET™2
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C40A (Ta), 198A (Tc)
Power dissipation3.8W (Ta), 300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ id3.3V @ 246µA
Rds on (Max) @ id, vgs1.3mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs305 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds13800 pF @ 30 V