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Infineon Technologies IPAW60R600CEXKSA1 — Discrete Semiconductors

Infineon IPAW60R600CEXKSA1 CoolMOS N-Ch 600V 10.3A MOSFET

MPNIPAW60R600CEXKSA1
Obsolete

Infineon CoolMOS™ IPAW60R600CEXKSA1 N-channel super-junction MOSFET, 600 V drain-source, 10.3 A continuous drain, 600 mOhm Rds(on) at 10 V, TO-220 Full Pack through-hole package, -40°C to 150°C junction temperature.

Infineon Technologies IPAW60R600CEXKSA1 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPAW60R600CEXKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10.3A (Tc)
Power dissipation28W (Tc)
Operating temperature-40°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureSuper Junction
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 200µA
Rds on (Max) @ id, vgs600mOhm @ 2.4A, 10V
Gate charge (Qg) (Max) @ vgs20.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds444 pF @ 100 V

Product details

TO-220 Full Pack — isolated tab matters

The TO-220 Full Pack (PG-TO220-FP) is a fully isolated through-hole package. No mounting pad or insulator is needed between the tab and the heatsink — the plastic overmold provides the isolation, which simplifies assembly and improves thermal coupling to the heatsink. The package dissipates up to 28 W at case temperature, so a proper heatsink is required for any load above a few amps continuous. The through-hole leads suit point-to-point wiring or a PCB with plated through-holes.

Infineon lists the IPAW60R600CEXKSA1 as obsolete.

Frequently asked questions

What is the replacement for IPAW60R600CEXKSA1?

A functionally similar CoolMOS part with comparable voltage and current ratings would need to be selected based on the specific design requirements — package, Rds(on), and gate charge. Cross-referencing against the CoolMOS family datasheet is recommended.