Infineon CoolMOS™ IPAW60R380CEXKSA1, N-Channel Super Junction MOSFET, 600 V drain-source, 15 A continuous drain, 380 mOhm Rds(on) at 10 V gate drive, PG-TO220-FP full-pack through-hole package.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 15A (Tc) |
| Power dissipation | 31W (Tc) |
| Operating temperature | -40°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Super Junction |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.5V @ 320µA |
| Rds on (Max) @ id, vgs | 380mOhm @ 3.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 32 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 700 pF @ 100 V |
At 15 A continuous drain, expect about 85 W dissipation at Rds(on) — well above the 31 W package limit at case temperature, so real-world operation requires derating or pulsed duty.
Infineon lists the IPAW60R380CEXKSA1 as obsolete. No direct pin-compatible successor is recorded in the official lifecycle data.
The IPAW60R380CEXKSA1 is obsolete but can be sourced through independent distribution. Submit an RFQ for current availability and pricing — we source and quote to order against your BOM line.
Infineon has not published a direct pin-compatible successor for the IPAW60R380CEXKSA1. For a functional replacement, consider a current CoolMOS C7 or P7 series part with similar 600 V, 380 mΩ, and TO-220 Full Pack ratings — cross-reference against your switching frequency and gate-drive voltage.
The maximum Rds(on) is 380 mΩ at a drain current of 3.8 A and a gate-source voltage of 10 V.