Infineon Technologies
Infineon CoolMOS™ P7 series, N-Channel MOSFET, 600 V drain-source, 12 A continuous drain, 280 mOhm Rds(on) at 10 V gate drive, PG-TO220-FP isolated full-pack package, through-hole mounting.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 24W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 190µA |
| Rds on (Max) @ id, vgs | 280mOhm @ 3.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 18 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 761 pF @ 400 V |
Buyers should treat it as an end-of-life line item and plan a last-time purchase or identify a replacement before inventory runs dry. That saves assembly time and one BOM line, but the full-pack body has higher thermal resistance than a standard TO-220; the 24 W power dissipation ceiling reflects that.
