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Infineon Technologies IPAW60R190CEXKSA1 — Discrete Semiconductors

Infineon IPAW60R190CEXKSA1 CoolMOS™ N-Channel MOSFET, 600 V

MPNIPAW60R190CEXKSA1
Obsolete

Infineon CoolMOS™ IPAW60R190CEXKSA1, N-channel MOSFET, 600 V drain-source, 190 mOhm on-resistance at 10 V gate drive, 26.7 A continuous drain current, TO-220 Full Pack through-hole package, -40°C to 150°C junction temperature.

$1.7600Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPAW60R190CEXKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C26.7A (Tc)
Power dissipation34W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 630µA
Rds on (Max) @ id, vgs190mOhm @ 9.5A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1400 pF @ 100 V

Product details

600 V CoolMOS™ in a fully isolated TO-220

It is designed for hard-switching topologies such as power factor correction (PFC) stages, flyback converters, and switched-mode power supplies where high-voltage capability and low conduction losses are required.

Key ratings for the design

The 600 V drain-source rating gives headroom for 400 VDC bus rails in single-phase PFC designs, with margin for switching transients. The 190 mOhm Rds(on) at 10 V gate drive sets a baseline for conduction loss: at 9.5 A, expect about 17 W dissipation from the channel alone. Gate charge is 63 nC at 10 V, which influences driver sizing and switching losses at higher frequencies. Input capacitance is 1400 pF at 100 V Vds, a moderate figure that keeps gate drive energy manageable.

The IPAW60R190CEXKSA1 is marked as Obsolete by Infineon. Buyers filling a BOM line for this part will need to source through independent distribution or surplus channels.

Frequently asked questions

What is the replacement for IPAW60R190CEXKSA1?

A parametric search for a 600 V, 190 mOhm N-channel MOSFET in a TO-220 Full Pack from Infineon's current CoolMOS™ portfolio is the recommended approach for finding a pin-compatible alternative.