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Infineon Technologies IPA95R750P7XKSA1 — Discrete Semiconductors

Infineon IPA95R750P7XKSA1 N-Channel MOSFET, 950 V, 750 mOhm

MPNIPA95R750P7XKSA1
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Infineon CoolMOS™ P7 series, IPA95R750P7XKSA1, N-Channel MOSFET, 950 V Vdss, 750 mOhm Rds(on) at 4.5 A, 10 V gate drive, 23 nC gate charge, 9 A continuous drain, TO-220 Full Pack through-hole, -55 to 150 °C.

$2.0700Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA95R750P7XKSA1 specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage950 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation28W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 220µA
Rds on (Max) @ id, vgs750mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds712 pF @ 400 V

Product details

The Infineon IPA95R750P7XKSA1 is a 950 V N-channel MOSFET from the CoolMOS P7 series, built in a through-hole TO-220 Full Pack (PG-TO220-FP) package. The 950 V drain-source rating gives real margin in 380 V DC-link PFC stages and universal-input flyback converters where 800 V bus transients are common — you are not running the part at its ceiling.

The CoolMOS series is a current-generation high-voltage MOSFET family, so there is no imminent end-of-life or last-time-buy pressure.

Package and thermal handling — the Full Pack advantage

The TO-220 Full Pack (PG-TO220-FP) is the fully isolated variant of the standard TO-220. The metal tab is encapsulated, so no mounting insulator or thermal pad is needed between the device and the heatsink — a BOM simplification for high-voltage offline supplies where creepage and clearance are tight. Plan the heatsink accordingly.

Frequently asked questions

What is the Vgs threshold for IPA95R750P7XKSA1?

The maximum gate threshold voltage is 3.5 V at a drain current of 220 µA. The recommended drive voltage for achieving the rated on-resistance is 10 V.