Infineon CoolMOS™ series, IPA90R800C3XKSA1, N-Channel MOSFET, 900 V drain-source, 800 mOhm Rds(on) at 10 V, 6.9 A continuous drain, TO-220-3 Full Pack, PG-TO220-FP, -55°C to 150°C junction.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 900 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6.9A (Tc) |
| Power dissipation | 33W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.5V @ 460µA |
| Rds on (Max) @ id, vgs | 800mOhm @ 4.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 42 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1100 pF @ 100 V |
The Infineon IPA90R800C3XKSA1 is a 900 V N-channel CoolMOS™ power MOSFET in the TO-220 Full Pack (PG-TO220-FP) package.
Sourcing is limited to surplus inventory and broker networks. For sustainment programs, a 900 V CoolMOS™ in the same TO-220 Full Pack footprint is the closest functional match.
Rds(on) is 800 mOhm at 4.1 A, 10 V. The 33 W package rating requires a heatsink.
Buyers need to find a drop-in or functionally equivalent part because the original is obsolete.
Confirms product availability and prevents wasted time on obsolete part research.
Design engineers and repair techs require pin configuration for PCB layout or replacement.
Sourcing buyers need quick cost and stock information to make purchase decisions.
Directs buyers to authorized distributors or reliable sources for procurement.
Critical spec for power dissipation and efficiency calculations in circuit design.