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Infineon Technologies IPA90R500C3XKSA1 — Discrete Semiconductors

IPA90R500C3XKSA1 CoolMOS™ N-Channel MOSFET, 900 V, 11 A

MPNIPA90R500C3XKSA1
Obsolete

Infineon CoolMOS™ IPA90R500C3XKSA1, N-Channel MOSFET, 900 Vdss, 11 A Id, 500 mOhm Rds(on) @ 10 V, TO-220-3 Full Pack, -55°C to 150°C.

$2.9029Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPA90R500C3XKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 740µA
Rds on (Max) @ id, vgs500mOhm @ 6.6A, 10V
Gate charge (Qg) (Max) @ vgs68 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1700 pF @ 100 V

Product details

900 V CoolMOS™ in a fully isolated through-hole package

The IPA90R500C3XKSA1: It comes in a TO-220-3 Full Pack (PG-TO220-FP) — the fully isolated plastic package that lets you bolt it directly to a heatsink without an insulating washer.

At 500 mOhm max with 6.6 A drain current and 10 V on the gate, conduction loss is predictable for a 900 V device in this current class.

Infineon lists the IPA90R500C3XKSA1 as obsolete.

The 34 W maximum power dissipation at case temperature is the thermal budget for the heatsink design; the TO-220 Full Pack's metal tab is electrically isolated, so no mica washer is needed, but the thermal resistance is higher than a standard TO-220 — account for that in the junction temperature calculation.

Frequently asked questions

What is the replacement for IPA90R500C3XKSA1?

Infineon has not published a direct successor order code for the IPA90R500C3XKSA1. The CoolMOS™ C3 generation has been superseded by later generations (C6, P6, etc.), but a drop-in replacement requires verifying the package (TO-220 Full Pack), 900 V rating, 500 mOhm Rds(on) range, and gate drive voltage. Check the latest Infineon CoolMOS™ selector for a 900 V N-channel in PG-TO220-FP with similar parametric targets.