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Infineon Technologies IPA90R1K2C3XKSA1 — Discrete Semiconductors

Infineon IPA90R1K2C3XKSA1 CoolMOS™ N-Channel MOSFET, 900 V

MPNIPA90R1K2C3XKSA1
Obsolete

Infineon CoolMOS™ IPA90R1K2C3XKSA1, N-Channel MOSFET, 900 V Vdss, 5.1 A Id, 1.2 Ohm Rds(on) @ 2.8 A, 10 V, TO-220-3 Full Pack, -55°C to 150°C.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPA90R1K2C3XKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.1A (Tc)
Power dissipation31W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 310µA
Rds on (Max) @ id, vgs1.2Ohm @ 2.8A, 10V
Gate charge (Qg) (Max) @ vgs28 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds710 pF @ 100 V

Product details

The Infineon IPA90R1K2C3XKSA1 is an N-channel CoolMOS™ power MOSFET in a through-hole TO-220-3 Full Pack package (PG-TO220-FP). The Full Pack variant provides full isolation from the heatsink, which simplifies mounting in offline power supplies, PFC stages, and flyback converters where the tab must not carry the rail voltage.

The IPA90R1K2C3XKSA1 is listed as obsolete.

The 900 V Vdss rating places this MOSFET squarely in high-voltage offline applications — think universal-input flyback converters, two-switch forward topologies, and PFC boost stages where the bus voltage can exceed 400 V. The 1.2 Ohm Rds(on) at 10 V gate drive sets the conduction loss: at 2.8 A the dissipation is roughly 9.4 W, which the TO-220 Full Pack with its 31 W power dissipation limit can handle with adequate heatsinking. Input capacitance is 710 pF at 100 V, which keeps switching losses manageable in the 50–100 kHz range typical of these topologies.

Frequently asked questions

Is IPA90R1K2C3XKSA1 obsolete?

Yes, the IPA90R1K2C3XKSA1 is listed as obsolete. Infineon has discontinued regular production, so new orders are fulfilled from surplus and broker inventory. Submit an RFQ to confirm current availability and pricing.

What is the Rds(on) of IPA90R1K2C3XKSA1?

The maximum on-resistance is 1.2 Ohm at a drain current of 2.8 A and a gate-source voltage of 10 V.

What is the replacement for IPA90R1K2C3XKSA1?

A pin-compatible replacement within the CoolMOS™ family would need to be selected and qualified against the original 900 V, 5.1 A, 1.2 Ohm Rds(on) targets. Contact us with your requirements to cross-reference a suitable alternative.