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Infineon Technologies IPA90R1K0C3XKSA1 — Discrete Semiconductors

Infineon IPA90R1K0C3XKSA1 CoolMOS N-Ch 900V 5.7A MOSFET

MPNIPA90R1K0C3XKSA1
Obsolete

Infineon CoolMOS™ N-Channel MOSFET, IPA90R1K0C3XKSA1, 900 V Vdss, 5.7 A Id @ 25°C, 1 Ohm Rds(on) @ 10 V, PG-TO220-FP (Full Pack), Through Hole.

$2.0700Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPA90R1K0C3XKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.7A (Tc)
Power dissipation32W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 370µA
Rds on (Max) @ id, vgs1Ohm @ 3.3A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds850 pF @ 100 V

Product details

900 V CoolMOS in a fully isolated package

What the 900 V rating and 5.7 A current mean for your design

The 900 V Vdss rating places this part squarely in high-voltage offline applications — flyback converters, PFC boost stages, auxiliary power supplies for industrial drives, and two-switch forward topologies where the DC bus sits at 400 V to 800 V. The 5.7 A continuous current at 25°C is derated to about 3.6 A at 100°C case temperature; the 32 W dissipation limit at Tc=25°C sets the practical thermal ceiling. Gate charge of 34 nC at 10 V is moderate, so the gate driver doesn't need to be oversized.

Infineon lists the IPA90R1K0C3XKSA1 as Obsolete. The date-code and lot traceability on any offered stock should be verified, as gray-market material for an obsolete CoolMOS part is a common counterfeit risk.

Package and temperature grade — installation context

The PG-TO220-FP (Full Pack) is a through-hole package with a fully molded back — no exposed metal tab. This simplifies assembly: you bolt it directly to the heatsink without a sil-pad or mica washer, though thermal compound is still recommended. The input capacitance of 850 pF at 100 V Vds is modest, so switching losses at frequencies up to 100 kHz are reasonable for a 900 V device.

Frequently asked questions

Is the IPA90R1K0C3XKSA1 obsolete?

Yes, Infineon lists the IPA90R1K0C3XKSA1 as Obsolete. Procurement relies on surplus and broker-channel stock.

What is the replacement for IPA90R1K0C3XKSA1?

No official replacement part number is recorded in the lifecycle data for the IPA90R1K0C3XKSA1. For a direct drop-in, you would need to evaluate other 900 V CoolMOS parts in the PG-TO220-FP package from Infineon's current portfolio, such as the IPA90R series base product number variants, and verify pin-compatibility and parametric overlap against your design's switching frequency and gate drive voltage.