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Infineon Technologies IPA80R750P7XKSA1 — Discrete Semiconductors

Infineon IPA80R750P7XKSA1 CoolMOS P7 N-Ch MOSFET, 800V

MPNIPA80R750P7XKSA1
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Infineon CoolMOS™ P7 series N-channel MOSFET, 800 V drain-source, 750 mOhm Rds(on) at 10 V gate drive, 7 A continuous drain, TO-220 Full Pack through-hole package, -55 to 150 °C junction temperature.

$1.5600Ref. price · indicative, final on quote
Infineon Technologies IPA80R750P7XKSA1 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA80R750P7XKSA1 specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation27W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 140µA
Rds on (Max) @ id, vgs750mOhm @ 2.7A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds460 pF @ 500 V

Product details

The IPA80R750P7XKSA1: 800 V drain-source rating. In practice, at a 100°C case the current limit drops to roughly 4.5 A — the thermal derating curve, not the 25°C number, is what drives the heatsink design.

Gate drive and threshold — setting the turn-on voltage

Gate threshold voltage maxes at 3.5 V at 140 µA drain current, and the datasheet calls for a 10 V drive to hit the rated Rds(on).

Input capacitance — the switching speed limiter

Input capacitance Ciss is 460 pF typical at 500 V drain-source.

Frequently asked questions

What is the Rds(on) of IPA80R750P7XKSA1?

That's the number to use for worst-case conduction loss in the thermal design.

Is IPA80R750P7XKSA1 obsolete or EOL?

Infineon has not issued an EOL notice for it. You can design it in without worrying about a near-term last-time-buy.