Infineon CoolMOS™ CE series, N-Channel MOSFET, 800 V Drain-Source Voltage, 4.5 A Continuous Drain Current @ 25°C, 650 mOhm Rds(on) @ 5.1 A, 10 V, ±20 V Gate-Source Voltage, 45 nC Gate Charge @ 10 V, Through Hole, TO-220-3 Full Pack, -40°C to 150°C Operating Temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CE |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4.5A (Tc) |
| Power dissipation | 33W (Tc) |
| Operating temperature | -40°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.9V @ 470µA |
| Rds on (Max) @ id, vgs | 650mOhm @ 5.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 45 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1100 pF @ 100 V |
The IPA80R650CEXKSA1: Rds(on) is 650 mOhm at 10 V gate drive. Gate charge is 45 nC at 10 V.
The PG-TO220-FP (full-pack) package has a fully isolated tab, so the heatsink does not require an insulating washer. The through-hole mounting suits point-of-load and off-line power supplies where wave-solder assembly is standard.
The IPA80R650CEXKSA1 is an active part; if a pin-compatible alternative is needed for dual-sourcing, consult the CoolMOS™ CE series datasheet for devices with the same PG-TO220-FP package and similar Rds(on) and voltage ratings.