800 V CoolMOS N-channel in an isolated TO-220
The Infineon IPA80R460CEXKSA2 is an 800 V N-channel CoolMOS power MOSFET in a TO-220-3 Full Pack (PG-TO220-3-31) package. The 800 V drain-to-source voltage makes it a candidate for offline flyback converters, PFC boost stages, and auxiliary power supplies where the primary-side switch sees the full rectified DC bus plus reflected voltage. The full-pack (isolated) backside simplifies heatsinking — no insulating pad or washer needed between the tab and the heatsink, which saves assembly time and reduces thermal resistance path length.
Gate drive and switching behaviour
The gate is driven to 10 V for the rated Rds(on); the maximum gate-to-source voltage is ±20 V. Total gate charge at 10 V is 64 nC, which is moderate for an 800 V device — the CoolMOS series keeps Qg low enough that a standard gate-driver IC can switch it in the 50–150 kHz range without excessive drive losses. Input capacitance measures 1600 pF at 100 V drain-source, so the driver sees a manageable capacitive load.
Thermal and power dissipation
In a typical 100 W flyback, the conduction loss at 7.1 A drain current and 460 mOhm Rds(on) is about 23 W — leaving roughly 11 W of headroom before hitting the package limit. The 150°C junction rating supports industrial ambient temperatures up to 85°C or more, provided the heatsink is sized to keep the junction below that ceiling. The full-pack package has a higher thermal resistance than a standard TO-220, so the heatsink selection matters more; a clip-on or bolt-on heatsink with moderate fin area is typical.
It is a current-production part in the CoolMOS family, with no end-of-life notice on file.