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Infineon Technologies IPA80R310CEXKSA2 — Discrete Semiconductors

Infineon IPA80R310CEXKSA2 CoolMOS N-Ch 800V 16.7A MOSFET

MPNIPA80R310CEXKSA2
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Infineon CoolMOS™ IPA80R310CEXKSA2, N-Channel MOSFET, 800 V Vdss, 16.7 A Id @ 25°C, 310 mOhm Rds(on) @ 10 V, PG-TO220-FP full-pak, -40 to 150°C.

$3.2100Ref. price · indicative, final on quote
Infineon Technologies IPA80R310CEXKSA2 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA80R310CEXKSA2 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16.7A (Tc)
Power dissipation35W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.9V @ 1mA
Rds on (Max) @ id, vgs310mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs91 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2320 pF @ 100 V

Product details

800 V CoolMOS — the full-pak superjunction switch

The IPA80R310CEXKSA2: It belongs to Infineon's CoolMOS superjunction series, which uses charge-compensation columns to achieve a lower Rds(on) per silicon area than conventional planar high-voltage MOSFETs.

Rds(on) and gate drive — what the 310 mOhm and 10 V mean for your design

The 310 mOhm max on-resistance at 10 V gate bias and 11 A drain current is the headline conduction-loss spec. At 16.7 A the Rds(on) will be higher than the 310 mOhm test-point value — budget for the positive temperature coefficient of the silicon when estimating full-load dissipation.

Gate charge and input capacitance — switching budget

These numbers size the gate-drive current and switching losses in a hard-switched converter.

TO-220 Full Pack — mounting and thermal notes

The PG-TO220-FP package is a through-hole full-pak with the mounting hole in the tab. Maximum power dissipation is 35 W at case temperature — that's the limit with the tab bolted to an infinite heatsink.

Frequently asked questions

What is the Rds(on) of IPA80R310CEXKSA2?

That's the test-point value; the actual Rds(on) at the full 16.7 A continuous rating will be higher due to the positive temperature coefficient of the silicon, and at elevated junction temperatures it can roughly double.

Can IPA80R310CEXKSA2 be used in a high-frequency converter?

It can be used, but the 91 nC gate charge and 2320 pF input capacitance are moderate figures. For switching frequencies above 200 kHz, consider a CoolMOS C7 or CFD2 series part with a lower figure of merit (Rds(on) × Qg) if efficiency is the priority. At 100 kHz and below, the IPA80R310CEXKSA2 switches cleanly with a standard gate driver.