6.8 A continuous — the package is the limit
That Full Pack means the tab is fully isolated — no need for a sil-pad or mica washer, which saves assembly time and improves thermal coupling to the heatsink. But the plastic body also limits heat extraction: the junction-to-case thermal path is the bottleneck, not the silicon. At elevated ambient temperatures, the usable current drops well below 6.8 A; the buyer should derate based on the 35 W ceiling and the actual case temperature in the enclosure.
91 nC gate charge — driver compatibility
With a total gate charge of 91 nC at 10 V, this MOSFET is compatible with standard 1 A to 2 A gate drivers used in common PWM controllers. The switching speed is moderate — expect rise and fall times in the tens of nanoseconds with a typical driver — which keeps EMI manageable in hard-switched topologies. The input capacitance of 2320 pF at 100 V drain-source confirms this is not a high-frequency RF device; it is built for the 50 kHz to 150 kHz range typical of offline power supplies.
Through-hole, isolated tab — rework-friendly
The TO-220 Full Pack is a through-hole package with three leads and a fully isolated plastic tab. For the rework bench, this is a straightforward part: the leads are thick enough to survive multiple solder cycles, and the isolated tab means you can clamp a heatsink directly without worrying about shorting to the drain. No special hot-air profile needed — a standard soldering iron at 350 °C works fine. The PG-TO220-FP supplier device package code is the Infineon-specific designation for this isolated TO-220 variant.
Storage temperature exceeds the operating range, so the part can sit on a shelf in a hot warehouse without issue.