Infineon CoolMOS™ IPA80R280P7XKSA1, N-channel 800 V, 280 mOhm Rds(on) at 10 V, 17 A continuous drain, Super Junction MOSFET, Through Hole TO-220-3 Full Pack, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 17A (Tc) |
| Power dissipation | 30W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Super Junction |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.5V @ 360µA |
| Rds on (Max) @ id, vgs | 280mOhm @ 7.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 36 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1200 pF @ 500 V |
The TO-220-3 Full Pack (PG-TO220-3-31) has a fully molded back — no exposed metal tab.
No official second source or pin-compatible replacement is recorded in the Infineon CoolMOS family for this exact package variant, but the base product number IPA80R280 covers multiple package options — the TO-220 Full Pack is the isolated-mount variant.
The maximum Rds(on) is 280 mOhm at 10 V gate drive with 7.2 A drain current.