800 V CoolMOS for high-voltage offline switching
The IPA80R1K4P7 is an N-Channel CoolMOS MOSFET with 800 V drain-source voltage and 1.4 Ohm on-resistance at 10 V.
Gate drive and switching performance
The 250 pF input capacitance at 500 V drain-source confirms the gate capacitance is modest, keeping drive losses low.
Thermal and mechanical fit
The TO-220 Full Pack (PG-TO220-3-31) is a through-hole package with a fully isolated backside — no mica washer needed, which speeds assembly and reduces BOM count. The 4 A continuous drain rating at 25°C should be derated per the datasheet's thermal derating curve when the case temperature exceeds 25°C, as is typical in a closed enclosure.