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Infineon Technologies IPA80R1K4CEXKSA1 — Discrete Semiconductors

Infineon IPA80R1K4CEXKSA1 CoolMOS CE N-Ch 800V 2.8A MOSFET

MPNIPA80R1K4CEXKSA1
End of Life

Infineon CoolMOS™ CE N-Channel MOSFET, 800 V drain-source, 2.8 A continuous drain, 1.4 Ohm on-resistance at 10 V gate drive, PG-TO220-FP full-pack through-hole package, -40 to 150 °C junction temperature.

$0.5300Ref. price · indicative, final on quote
Infineon Technologies IPA80R1K4CEXKSA1 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA80R1K4CEXKSA1 specifications
ParameterValue
SeriesCoolMOS™ CE
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.8A (Tc)
Power dissipation31W (Tc)
Operating temperature-40°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.9V @ 240µA
Rds on (Max) @ id, vgs1.4Ohm @ 2.3A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds570 pF @ 100 V

Product details

The Infineon IPA80R1K4CEXKSA1 is an 800 V N-channel MOSFET from the CoolMOS™ CE series, built for high-voltage offline power conversion. Its 800 V drain-source rating (Vdss) gives the headroom needed in universal-input flyback converters, PFC boost stages, and auxiliary power supplies where the DC bus can exceed 400 V and transients push higher. The PG-TO220-FP full-pack package means the back of the part is fully molded — no exposed metal tab. That saves an insulating washer and simplifies assembly, but the thermal path runs through the epoxy, so the 31 W maximum power dissipation is lower than a standard TO-220 with the same die.

Sizing the gate drive and switching losses

The 10 V drive voltage (Vgs) is the recommended level to achieve the rated Rds(on); driving with 12 V is fine within the ±20 V Vgs max.

Through-hole assembly and rework

The TO-220 Full Pack is a three-lead through-hole package. It solders into a board with standard wave or hand-soldering; the full-mold body means no metal tab to solder to a copper pour. Rework is straightforward — heat all three leads simultaneously with a wide tip or hot air, lift the part without lifting the pad.

Frequently asked questions

What is a suitable replacement for IPA80R1K4CEXKSA1?

The base product number is IPA80R, so the closest variant is IPA80R1K4CE — the difference is only the suffix (EXKSA1 vs CE), which typically indicates packaging or tape/reel vs tube. Both share the same CoolMOS CE die and electrical ratings. For a pin-compatible alternative within the family, any IPA80R device in the same PG-TO220-FP package will fit the same footprint, but check the Rds(on) and current rating against your design margin.

Can IPA80R1K4CEXKSA1 be used in a flyback converter?

Yes. The 800 V drain-source rating provides adequate margin for universal-input AC-DC flyback converters (up to 400 V DC bus plus leakage inductance spike). The 2.8 A continuous drain current and 1.4 Ohm Rds(on) suit auxiliary supplies and lower-power (<50 W) flyback stages. The 23 nC gate charge keeps switching losses low at typical flyback frequencies.

Is IPA80R1K4CEXKSA1 RoHS compliant?

Standard Infineon CoolMOS CE devices are RoHS compliant and halogen-free. Verify the specific date code if your compliance audit requires a certificate.